january 2006 ? 2006 fairchild semiconductor corporation www.fairchildsemi.com FDY101PZ rev a FDY101PZ single p-channel (? 2.5v) specified powertrench ? mosfet general description this single p-channel mosfet has been designed using fairchild semiconductor?s advanced power trench process to optimize the r ds(on) @ v gs = ? 2.5v. applications ? li-ion battery pack features ? ? 150 ma, ? 20 v r ds(on) = 8 ? @ v gs = ? 4.5 v r ds(on) = 12 ? @ v gs = ? 2.5 v ? esd protection diode (note 3) ? rohs compliant absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ? 20 v v gss gate-source voltage 8 v drain current ? continuous (note 1a) ? 150 ma i d ? pulsed ? 1000 power dissipation (steady state) (note 1a) 625 mw p d (note 1b) 446 t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 200 c/w r ja thermal resistance, junction-to-ambient (note 1b) 280 package marking and ordering information device marking device reel size tape width quantity b FDY101PZ 7?? 8 mm 3000 units FDY101PZ single p-channel (? 2.5v) specified powertrench ? mosfet 1 2 3 g d s 1 s g d
FDY101PZ rev a www .fairchildsemi.com electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ? 250 a ? 20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ? 250 a, referenced to 25 c 15 mv/ c i dss zero gate voltage drain current v ds = ? 16 v, v gs = 0 v ? 3 a i gss gate?body leakage, v gs = 8 v, v ds = 0 v 10 a on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ? 250 a ? 0.65 ? 1.0 ? 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?3 mv/ c r ds(on) static drain?source on?resistance v gs = ? 4.5 v, i d = ? 150 ma v gs = ? 2.5 v, i d = ? 125 ma v gs = ? 1.8 v, i d = ? 100 ma v gs = ? 1.5 v i d = ? 30 ma v gs = ? 4.5 v, i d = ? 150ma, t j = 125 c 8 12 15 20 12 ? g fs forward transconductance v ds = ? 5 v, i d = ? 150 ma 0.7 s dynamic characteristics c iss input capacitance 100 pf c oss output capacitance 30 pf c rss reverse transfer capacitance v ds = ? 10 v, v gs = 0 v, f = 1.0 mhz 15 pf switching characteristics (note 2) t d(on) turn?on delay time 6 12 ns t r turn?on rise time 13 23 ns t d(off) turn?off delay time 8 16 ns t f turn?off fall time v dd = ? 10 v, i d = ? 0.5 a, v gs = ? 4.5 v, r gen = 6 ? 1 2 ns q g total gate charge 1.0 1.4 nc q gs gate?source charge 0.2 nc q gd gate?drain charge v ds = ? 10 v, i d = ? 150 ma, v gs = ? 4.5 v 0.3 nc drain?source diode characteristics and maximum ratings v sd drain?source diode forward voltage v gs = 0 v, i s = ? 150 ma (note 2) ? 0.8 ? 1.2 v t rr diode reverse recovery time 11 ns q rr diode reverse recovery charge i f = ? 150 ma, di f /dt = 100 a/s 2 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 200c/w when mounted on a 1in 2 pad of 2 oz copper b) 280c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper 2 . pulse test: pulse width < 300 s, duty cycle < 2.0% 3. the diode connected between the gate and source serves only as protection againts esd. no gate overvoltage rating is implied. FDY101PZ single p-channel (? 2.5v) specified powertrench ? mosfet
FDY101PZ rev a www .fairchildsemi.com typical characteristics 0 0.2 0.4 0.6 0.8 1 00.511.52 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -3.0v -1.8v -2.0v -2.5v -3.5v -1.5v 0 1 2 3 4 5 00.20.40.60.81 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs =-1.5v -2.5v -3.0v -4.5v -1.8v -2.0v -3.5v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -0.15a v gs = -4.5v 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0246810 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -0.075a t a = 125 o c t a = 25 o c igure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 0.2 0.4 0.6 0.8 1 0.511.522.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDY101PZ single p-channel (? 2.5v) specified powertrench ? mosfet
FDY101PZ rev a www .fairchildsemi.com typical characteristics 0 2 4 6 8 10 00.511.522.5 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -0.15a v ds = -5v -15v -10v 0 25 50 75 100 125 150 0 4 8 12 16 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 0.01 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms 100 s r ds(on) limit v gs = -4.5v single pulse r ja = 280 o c/w t a = 25 o c 10ms 1ms 10s 0 2 4 6 8 10 0.0001 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 280c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =280 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDY101PZ single p-channel (? 2.5v) specified powertrench ? mosfet
FDY101PZ rev a www .fairchildsemi.com dimensional outline and pad layout notes: unless otherwise specified a) this package conforms to eiaj sc89 packaging standard. b) all dimensions are in millimeters. c) dimensions are exclusive of burrs, mold flash, and tie bar extrusions. 1.70 1.50 0.98 0.78 1.70 1.50 0.50 1.00 0.35 0.25 0.54 0.34 0.43 0.28 0.78 0.58 (0.15) 12 3 land pattern recommendation 1.80 0.50 1.14 0.50 0.50 0.66 see detail a 0.20 0.04 detail a scale 2 : 1 0.10 0.00 FDY101PZ single p-channel (? 2.5v) specified powertrench ? mosfet
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? rev. i18 acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop?
|
